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Home Product NTJD4152PT1G SOT-123 Dual NPN Digital Transistor, ON Semiconductor, Low VCE(sat), High-Speed Switching Applications

NTJD4152PT1G SOT-123 Dual NPN Digital Transistor, ON Semiconductor, Low VCE(sat), High-Speed Switching Applications

NTJD4152PT1G SOT-363

Dual N-Channel MOSFET

Logic Level Gate Driver

NTJD4152PT1G

NTJD4152PT1G SOT-363 Dual N-Channel MOSFET features logic level gate drive compatibility (3.3V/5V) with 30V drain-source voltage, 1.6A continuous current per channel. Low on-resistance and compact package suit power management, load switching, and space-constrained applications like portable electronics or high-density circuits. Enhances efficiency in battery-powered systems.

Categories:Electronic components

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Product Description

The NTJD4152PT1G is a compact SOT-363 packaged Dual N-Channel MOSFET integrated with a Logic Level Gate Driver, designed for efficient low-voltage control in high-speed switching applications. It features two independent N-channel MOSFETs, each driven by a logic-compatible gate input (1.8V to 5V), enabling direct interface with microcontrollers or digital circuits. With a drain-source voltage rating of 20V and continuous drain current of 1.3A per channel, it operates reliably within a temperature range of -55°C to 150°C, suitable for automotive, industrial automation, and portable electronics. Key advantages include low on-resistance (RDS(on) ≤ 0.25Ω), fast switching speeds, and minimized package footprint. However, limited current handling and thermal dissipation constrain high-power use cases. Typical applications include power management, load switching, and motor control systems requiring precise logic-level signal conversion.

Parameter	Specification
Configuration	Dual N-Channel MOSFET
Package	SOT-363
Drain-Source Voltage (V_DS)	30 V
Continuous Drain Current (I_D)	1.3 A
Pulsed Drain Current (I_DM)	4.0 A
Gate Threshold Voltage (V_GS(th))	1.0 V (max)
Gate-Source Voltage (V_GS)	±12 V
On-Resistance (R_DS(on))	100 mΩ @ V_GS=5 V
Total Power Dissipation	200 mW
Operating Junction Temperature	-55°C to +150°C
Input Capacitance (C_iss)	45 pF
Output Capacitance (C_oss)	25 pF
Gate Drive Type	Logic Level (V_GS=1.8 V operable)
Rise Time (t_r)	6 ns
Fall Time (t_f)	4 ns

question:Can the company provide upgraded or alternative models?
answer:Yes, we can provide upgraded or alternative models based on your specifications or requirements.
question:Can you provide shipment photos and purchase dates for similar products?
answer:Yes, we can provide shipment photos and purchase dates upon request. Please contact us for details.
question:Does the company offer technical selection services?
answer:Yes, we offer technical selection services with expert support to help choose the best product for your needs.
question:Can the company ensure stable product supply?
answer:Yes, we maintain long-term partnerships and strict inventory management.
question:Why is there a transaction fee?
answer:The fee covers payment processing and administrative costs for secure transactions.

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