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Home Product SKiiP 02NAC12T4V1 IGBT Power Module Semikron 1200V 12A Motor Drive Inverter Power Electronics

SKiiP 02NAC12T4V1 IGBT Power Module Semikron 1200V 12A Motor Drive Inverter Power Electronics

SKiiP 02NAC12T4V1 module
SKiiP NAC12T4V1 IGBT
SKiiP 02NAC12T4V1 semiconductor
SKiiP 02NAC12T4V1
The SKiiP 02NAC12T4V1 module integrates SKiiP NAC12T4V1 IGBT technology, a high-performance semiconductor solution for power conversion and motor drives. Designed for industrial applications, renewable energy systems, and frequency converters, it delivers reliable thermal management, robust current handling, and enhanced protection features in compact packaging.

Product Description

The SKiiP 02NAC12T4V1 module is a high-performance semiconductor power module integrating the SKiiP NAC12T4V1 IGBT technology, designed for industrial motor drives, renewable energy systems, and automation. It operates at a voltage rating of 1200 V and a nominal current of 40 A, supporting direct integration with three-phase inverters or converters. The module features a compact design with integrated gate drivers and temperature sensors, ensuring reliable control and thermal management. It operates within a temperature range of -40°C to +125°C, suitable for harsh environments. Key advantages include high efficiency, reduced wiring complexity, and robust protection against overcurrent or overtemperature. However, its specialized design may require precise cooling solutions and compatibility checks with existing systems. Widely used in industrial machinery, the SKiiP 02NAC12T4V1 semiconductor solution prioritizes energy efficiency and durability, though installation complexity could pose challenges in retrofitting applications. Parameters like battery capacity or screen size are not applicable, as the module focuses on power conversion.
Parameter Specification
Module Type SKiiP 02NAC12T4V1 IGBT Power Module
Maximum Collector-Emitter Voltage (VCES) 1200 V
Continuous Collector Current (IC) 12 A @ 25°C
Insulation Voltage (Viso) 4000 V RMS
Max Junction Temperature (Tj) 150°C
IGBT Technology Trench/Field-Stop
Gate-Emitter Threshold Voltage (VGE(th)) 5.5 V ±0.5
Module Configuration Single Switch with Diode
Reverse Recovery Time (trr) 55 ns (Typical)
Thermal Resistance Junction-Case (RthJC) 0.35 K/W
Semiconductor Material Silicon (Si)
Switching Frequency Up to 20 kHz
question:Why is there a handling fee?
answer:Handling fees cover transaction processing and administrative costs essential for service maintenance.
question:Can the company ensure stable supply?
answer:Yes, we maintain strong supplier relationships and efficient inventory management for reliable supply.
question:Do you accept payment after delivery?
answer:Yes, in some cases. We require credit evaluation and prior agreement for payment after delivery.
question:Can the company ensure stable product supply?
answer:Yes, we maintain long-term partnerships and strict inventory management.
question:Why is there a transaction fee?
answer:The fee covers payment processing and administrative costs for secure transactions.
question:Why is there a handling fee?
answer:Handling fees cover transaction processing and administrative costs essential for service maintenance.
question:Can the company ensure stable supply?
answer:Yes, we maintain strong supplier relationships and efficient inventory management for reliable supply.
question:Do you accept payment after delivery?
answer:Yes, in some cases. We require credit evaluation and prior agreement for payment after delivery.
question:Can the company ensure stable product supply?
answer:Yes, we maintain long-term partnerships and strict inventory management.
question:Why is there a transaction fee?
answer:The fee covers payment processing and administrative costs for secure transactions.
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